The TS512MSK64V3N-I is a 512M x 64bits DDR3-1333 2Rank SO-DIMM. The TS512MSK64V3N-I consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V3N-I is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

• 4 GB memory allows you to have more programs open at a time
• 204-pin-pin DDR3-1333/PC3-10600 operates at an effective bus speed with minimal power consumption and as a result, you get optimal computer performance with an improved memory heat dissipation
• Up to 1333 MHz speed with Unbuffered signal for playing the latest games and using heavy software